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| BF244A / BF244B / BF244C BF244A BF244B BF244C S G TO-92 D N-Channel RF Amplifier This device is designed for RF amplifier and mixer applications operating up to 450 MHz, and for analog switching requiring low capacitance. Sourced from Process 50. Absolute Maximum Ratings* Symbol VDG VGS ID IGF Tstg Drain-Gate Voltage Gate-Source Voltage Drain Current Forward Gate Current Storage Temperature Range TA = 25C unless otherwise noted Parameter Value 30 - 30 50 10 -55 to +150 Units V V mA mA C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RJC RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max BF244A / BF244B / BF244C 350 2.8 125 357 Units mW mW/C C/W C/W 1997 Fairchild Semiconductor Corporation BF244A / BF244B / BF244C N-Channel RF Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions Min Typ Max Units OFF CHARACTERISTICS V(BR)GSS IGSS VGSS(off) VGS Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage Gate-Source Voltage IG = 1.0 A, VDS = 0 VGS = - 20 V, VDS = 0 VDS = 15 V, ID = 10 nA VDS = 15 V, ID = 200 A 244A 244B 244C 30 5.0 - 0.5 - 0.4 - 1.6 - 3.2 - 8.0 - 2.2 - 3.8 - 7.5 V nA V V V V ON CHARACTERISTICS IDSS Zero-Gate Voltage Drain Current VDS = 15 V, VGS = 0 244A 244B 244C 2.0 6.0 12 6.5 15 25 mA mA mA SMALL SIGNAL CHARACTERISTICS yfs yos yrs Ciss Crss Coss NF F(Yfs) Forward Transfer Admittance Output Admittance Reverse Transfer Admittance Input Capacitance Reverse Transfer Capacitance Output Capacitance Noise Figure Cut-Off Frequency VDS = 15 V, VGS = 0, f = 1.0 kHz VDS = 15 V, VGS = 0, f = 200 MHz VDS = 15 V, VGS = 0, f = 1.0 kHz VDS = 15 V, VGS = 0, f = 200 MHz VDS = 20 V, VGS = - 1.0 V VDS = 20 V, VGS = - 1.0 V, f = 1.0 MHz VDS = 20 V, VGS = - 1.0 V, f = 1.0 MHz VDS = 15 V, VGS = 0, RG = 1.0 k, f = 100 MHz VDS = 15 V, VGS = 0 3.0 5.6 40 1.0 3.0 0.7 0.9 1.5 700 6.5 mmhos mmhos mhos mhos pF pF pF dB MHz 5 Typical Characteristics Transfer Characteristics 20 ID - DRAIN CURRENT (mA) r DS - DRAIN ON RESISTANCE ( ) Channel Resistance vs Temperature 1000 500 300 200 100 V GS(OFF) = -4.5V TA = -55 C T A = +25 C O O V DS = 15V 16 V GS(OFF) = -1.0V -2.5 V -5.0V -8.0 V 12 T A = +125O C TA = -55 C T A = +25 C T A = +125O C O O 8 50 30 20 10 4 V DS = 100mV -2.5 V 0 0 -1 -2 -3 -4 VGS - GATE-SOURCE VOLTAGE(V) -5 V GS = 0 V -50 0 50 100 150 T A - AMBIENT TEMPERATURE ( C) |
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